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Center for Nonlinear Studies |
I will present an overview of a non-volatile magnetic random access memory (MRAM) that uses magnetic tunnel junctions as magneto-resistive elements and present the current state of the art and its limitations. I will show how these limitations can be overcome using spin torque transfer switching and then describe our efforts in this regard. This memory is fast, dense, non-volatile and very low power. It is a candidate for becoming a universal memory replacing SRAM, DRAM and Flash! We are exploring novel materials for both electrodes and tunnel barriers working with a small company Grandis Inc.
Host: Gennady Berman